november 2013 FDPF035N06B ? n-channel powertrench ? mosfet ?2013 fairchild semiconductor corporation FDPF035N06B rev. c1 www.fairchildsemi.com 1 FDPF035N06B n-channel powertrench ? mosfet 60 v, 88 a, 3.5 m features ?r ds(on) = 2.91 m ( typ.) @ v gs = 10 v, i d = 88 a ? low fom r ds(on) *q g ? low reverse recovery charge, q rr ? soft reverse recovery body diode ? enables highly efficiency in synchronous rectification ? fast switching speed ? 100% uil tested ? rohs compliant description this n-channel mosfet is pr oduced using fairchild semicon- ductor?s advanced powertrench ? process that has been tai- lored to minimize the on-state resistance while maintaining superior switching performance. applications ? synchronous rectification for atx / server / telecom psu ? battery protection circuit ? motor drives and uninterruptible power supplies ? renewable system absolute maximum ratings t c = 25 o c unless otherwise noted. thermal characteristics symbol parameter FDPF035N06B_f152 unit v dss drain to source voltage 60 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c, silicon limited) 88 a - continuous (t c = 100 o c, silicon limited) 62 i dm drain current - pulsed (note 1) 352 a e as single pulsed avalanche energy (note 2) 600 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 46.3 w - derate above 25 o c0.31w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering, 1/8? from case for 5 seconds 300 o c symbol parameter FDPF035N06B_f152 unit r jc thermal resistance, junction to case, max. 3.24 o c/w r ja thermal resistance, junction to ambient, max. 62.5 to-220f g d s g s d
?2013 fairchild semiconductor corporation FDPF035N06B rev. c1 www.fairchildsemi.com 2 FDPF035N06B ? n-channel powertrench ? mosfet package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted. off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics part number top mark package packing method reel size tape width quantity FDPF035N06B_f152 FDPF035N06B to-220f tube n/a n/a 50 units symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 60 - - v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.03 - v/ o c i dss zero gate voltage drain current v ds = 48 v, v gs = 0 v - - 1 a i gss gate to body leakage current v gs = 20 v, v ds = 0 v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2-4v r ds(on) static drain to source on resistance v gs = 10 v, i d = 88 a - 2.91 3.5 m g fs forward transconductance v ds = 10 v, i d = 88 a - 176 - s c iss input capacitance v ds = 30 v, v gs = 0 v, f = 1 mhz - 6035 8030 pf c oss output capacitance - 1685 2240 pf c rss reverse transfer capacitance - 55 - pf c oss(er) energy related output capacitance v ds = 30 v, v gs = 0 v - 2619 - pf q g(tot) total gate charge at 10v v ds = 30 v, i d = 100 a, v gs = 10 v (note 4) -7699nc q gs gate to source gate charge - 29 - nc q gd gate to drain ?miller? charge - 12 - nc v plateau gate plateau volatge - 5.2 - v q sync total gate charge sync. v ds = 0 v, i d = 50 a - 67.3 - nc q oss output charge v ds = 30 v, v gs = 0 v - 92.4 - nc esr equivalent series resistance (g-s) f = 1 mhz - 2.0 - t d(on) turn-on delay time v dd = 30 v, i d = 100 a, v gs = 10 v, r g = 4.7 (note 4) -3274ns t r turn-on rise time - 33 76 ns t d(off) turn-off delay time - 56 122 ns t f turn-off fall time - 23 56 ns i s maximum continuous drain to source diode forward current - - 88 a i sm maximum pulsed drain to source diode forward current - - 352 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 88 a - - 1.25 v t rr reverse recovery time v gs = 0 v, i sd = 100 a, di f /dt = 100 a/ s -71-ns q rr reverse recovery charge - 78 - nc notes: 1. repetitive rating: pulse-width limited by maximum junction temperature. 2. l = 3 mh, i as = 20 a, starting t j = 25 c. 3. i sd 100 a, di/dt 200 a/ s, v dd bv dss , starting t j = 25 c. 4. essentially independent of operating temperature typical characteristics.
?2013 fairchild semiconductor corporation FDPF035N06B rev. c1 www.fairchildsemi.com 3 FDPF035N06B ? n-channel powertrench ? mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 2 10 100 400 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 5.0v 234567 1 10 100 200 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 50 100 150 200 250 300 2.0 2.5 3.0 3.5 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [m ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 200 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 60 10 100 1000 10000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 2040608090 0 2 4 6 8 10 *note: i d = 100a v ds = 12v v ds = 30v v ds = 48v v gs , gate-source voltage [v] q g , total gate charge [nc]
?2013 fairchild semiconductor corporation FDPF035N06B rev. c1 www.fairchildsemi.com 4 FDPF035N06B ? n-channel powertrench ? mosfet typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temp erature figure 11. eoss vs. drain to source voltage figure 12. unclamped inductive switching capability -100 -50 0 50 100 150 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 *notes: 1. v gs = 10v 2. i d = 88a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.90 0.95 1.00 1.05 1.10 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] 0.1 1 10 100 0.01 0.1 1 10 100 1000 100 s 1ms 10ms 100ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) single pulse t c = 25 o c t j = 175 o c r jc = 3.24 o c/w dc 25 50 75 100 125 150 175 0 20 40 60 80 100 r jc = 3.24 o c/w v gs = 10v i d , drain current [a] t c , case temperature [ o c] 0 102030405060 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e oss , [ j] v ds , drain to source voltage [v] 0.001 0.01 0.1 1 10 100 1000 1 10 100 200 t j = 25 o c t j = 150 o c t av , time in avalanche (ms) i as , avalanche current (a)
?2013 fairchild semiconductor corporation FDPF035N06B rev. c1 www.fairchildsemi.com 5 FDPF035N06B ? n-channel powertrench ? mosfet typical performance characteristics (continued) figure 13 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.02 0.1 1 4 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.24 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2 z jc (t), thermal response [ o c/w] t 1 , rectangular pulse duration [sec]
?2013 fairchild semiconductor corporation FDPF035N06B rev. c1 www.fairchildsemi.com 6 FDPF035N06B ? n-channel powertrench ? mosfet figure 14. gate charge test circuit & waveform figure 15. resistive switch ing test circuit & waveforms figure 16. unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v gs i g = const.
?2013 fairchild semiconductor corporation FDPF035N06B rev. c1 www.fairchildsemi.com 7 FDPF035N06B ? n-channel powertrench ? mosfet figure 17. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
?2013 fairchild semiconductor corporation FDPF035N06B rev. c1 www.fairchildsemi.com 8 FDPF035N06B ? n-channel powertrench ? mosfet figure 18. total gate charge qsync. test circuit & waveforms v gs (dut) v gs ( driver) driver r g v cc du t v r v dd () 1 g r g qsync v t dt r =? ? g 10v t t v gs
?2013 fairchild semiconductor corporation FDPF035N06B rev. c1 www.fairchildsemi.com 9 FDPF035N06B ? n-channel powertrench ? mosfet mechanical dimensions figure 19. to220, molded, 3-lead, full pack, eiaj sc91, takcheong package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/ packagedetails.html?id=pn_tf220-0a3
?2013 fairchild semiconductor corporation FDPF035N06B rev. c1 www.fairchildsemi.com 10 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or desi gn. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm greenbridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? mwsaver ? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost ? tinybuck ? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourage s customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fair child?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. rev. i66 tm ? FDPF035N06B ? n-channel powertrench ? mosfet
|
